Abstrait

Temperature-Voltage characteristic of Si 1N4007 diode

S.B.Ota

The forward voltage of Si 1N4007 diode has been measured in the temperature range 30- 300 K and for current values between 10 nA and 200 A. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st, 2nd and 3rd order least-squares fitting has high temperature root between 320 K and 500 K. The presence of high temperature root indicates that the fitted polynomials are of similar nature. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values.