Abstrait

Synthesis and Electrical Characterisation of Bismuth Doped Yttrium Oxide

G. Bhavani, S. Ganesan, S. Selvasekarapandian, S. Monisha and M. Premalatha

Nanosized metal oxides, in a variety of morphologies (such as particles, spheres, rods, and sheets), have attracted a great deal of attention in wide areas of research and technology. Yttrium oxide, as an important member among rare-earth compounds, has been actively studied in the recent years. It is one of the most promising elements to act as gate materials for MOSFETs instead of SiO2. Hence Yttrium oxide is selected as the host lattice for the study and the simple, cost effective precipitation methods are chosen as synthesis methods. Pure yttrium oxide and bismuth doped yttrium oxide samples of three doping concentration are prepared by sol-gel method. FTIR studies confirm the presence of functional groups in the samples. XRD studies show amorphous nature with broad hump for pure yttrium oxide samples and better crystallinity is observed for bismuth doped yttrium oxide samples.From the electrical studies it has been observed that the maximum conductivity achieved was for pure sample. Further, it is also observed that the pure sample has the highest dielectric constant values than the bismuth doped yttrium oxide samples. It may due to the introduction of holes in the host yttrium oxide. Dielectric studies show that loss tangent is found to be less at high frequency.