Abstrait

On approach to decrease dimensions of element "OR"manufactured by using field-effect heterotransistor

E.L.Pankratov, E.A.Bulaeva


In this paper we introduce an approach to decrease dimensions of logical elements “OR” based on field-effect heterotransistor. The approach based on manufacture the heterostructure with required configuration, diffusion or ion doping of required areas of the heterostructure and optimization of annealing of dopant and/or radiation defects. Several recommendations to optimize annealing both dopant and radiation defects have been formulated.


Indexé dans

  • CASS
  • Google Scholar
  • Ouvrir la porte J
  • Infrastructure nationale du savoir de Chine (CNKI)
  • CiterFactor
  • Cosmos SI
  • MIAR
  • Laboratoires secrets des moteurs de recherche
  • Euro Pub
  • Université de Barcelone
  • ICMJE

Voir plus

Flyer