Abstrait

Modeling nanoscale MOS capacitors

A.G.Anastopoulos

The capacitance/voltage characteristics of MOS capacitors with semiconductor and oxide layers of nanometer thickness are modeled by means of equations incorporating the semiconductor and oxide thickness, the doping level and the effects of energy states at the oxide/semiconductor interface and at the semiconductor backside viz the side opposite to the oxide-semiconductor contact. The effect of the semiconductor thickness on the impedance characteristics of the device is introduced by means of a different than zero backside potential. Model equations are derived for both equilibrium and non-equilibriumconditions, practically corresponding tomeasuring frequencies ranging frombelow10Hz up to above 1kHz.