Abstrait

Low resistance ohmic contact to n-GaAs

R.K.Singh

In this paper, a technique for obtaining ohmic contact to n-GaAs is discussed. The contact resistance have been measured by plotting the V-I characteristics. For confirming the reliability and reproducibility of the method,Alarge number of sample were prepared and measurements were conducted. V-I characteristics for the samples were found to be linear and identical, which shows that the method developed is reliable and reproducible. An important factor that is generally recognized is that surface cleanliness is essential for reliable and reproducible ohmic contacts. The obtained specific contact resistance was in close agreement with the methods obtained by others.