Abstrait

Analysis of regimes of growth of epitaxial layers in gas phase epitaxy reactors to increase homogeneity of properties of the layers

E.L.Pankratov, E.A.Bulaeva

In this paper we analyzed mass and heat transport during growth of epitaxial layers in reactors for epitaxy from gas phase with sloping keeper of substrate in comparison with flow of mixture of gas-carrier and gas-reagents. We analyzed possibility to increase homogeneity of properties of epitaxial layers during different regimes of growth. We introduce an analytical approach for analysis of technological process